Abstract
Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
- Received 30 May 1980
DOI:https://doi.org/10.1103/PhysRevLett.45.494
©1980 American Physical Society
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Letters from the Past - A PRL Retrospective
2008 marked PRL’s 50th anniversary. As part of the celebrations a collection of milestone Letters was started. The collection contains Letters that have made long-lived contributions to physics, either by announcing significant discoveries, or by initiating new areas of research.