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    Inelastic Scattering of Tunneling Electrons by Localized Vibrational Modes in PbTe p−n Junctions

    W. Salaneck, Y. Sawada*, E. Burstein, and M. Nelson

    • Physics Department and Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania

    • *Present address: Physics Department, Osaka University, Osaka, Japan.
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    Phys. Rev. Lett. 20, 1097 – Published 13 May, 1968

    DOI: https://doi.org/10.1103/PhysRevLett.20.1097

    Abstract

    Liquid-helium-temperature tunneling data for PbTe indium-doped p−n junctions exhibit a series of sharp conductance increments with ∼5-mV spacing as well as the "zero-bias conductance minimum" and the LO-phonon shoulder at ∼13.8 mV. Indium-gallium alloyed junctions exhibit also a second series with ∼6.5-mV spacing. This periodic structure is attributed to the "inelastic scattering" of tunneling electrons by localized vibrational modes of the indium and gallium impurity atoms in the tunneling junction.

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    Phys. Rev. Lett. 20, 1097– Published 13 May, 1968
    • Received 21 March 1968

    © 1968 American Physical Society

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