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Photoemission Spectroscopic Evidence for the Dirac Nodal Line in the Monoclinic Semimetal SrAs3

Y. K. Song, G. W. Wang, S. C. Li, W. L. Liu, X. L. Lu, Z. T. Liu, Z. J. Li, J. S. Wen, Z. P. Yin, Z. H. Liu, and D. W. Shen
Phys. Rev. Lett. 124, 056402 – Published 7 February 2020

Abstract

Topological nodal-line semimetals with exotic quantum properties are characterized by symmetry-protected line-contact bulk band crossings in the momentum space. However, in most of identified topological nodal-line compounds, these topological nontrivial nodal lines are enclosed by complicated topological trivial states at the Fermi energy (EF), which would perplex their identification and hinder further applications. Utilizing angle-resolved photoemission spectroscopy and first-principles calculations, we provide compelling evidence for the existence of Dirac nodal-line fermions in the monoclinic semimetal SrAs3, which possesses a simple nodal loop in the vicinity of EF without the distraction from complicated trivial Fermi surfaces. Our calculations revealed that two bands with opposite parities were inverted around Y near EF, resulting in the single nodal loop at the ΓYS plane with a negligible spin-orbit coupling effect. The band crossings were tracked experimentally and the complete nodal loop was identified quantitatively, which provide a critical experimental support for the existence of nodal-line fermions in the CaP3 family of materials. Hosting simple topological nontrivial bulk electronic states around EF and without complication from the trivial states, SrAs3 is expected to be a potential platform for topological quantum state investigation and applications.

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  • Revised 2 January 2020
  • Received 23 August 2019
  • Accepted 10 January 2020

DOI:https://doi.org/10.1103/PhysRevLett.124.056402

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter & Materials Physics

Authors & Affiliations

Y. K. Song1,2,3,*, G. W. Wang4,*, S. C. Li5, W. L. Liu1,2,3, X. L. Lu1,6, Z. T. Liu1, Z. J. Li1, J. S. Wen5,7, Z. P. Yin4,†, Z. H. Liu1,‡, and D. W. Shen1,2,§

  • 1Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
  • 4Department of Physics and Center for Advanced Quantum Studies, Beijing Normal University, Beijing 100875, China
  • 5National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 6University of Chinese Academy of Sciences, Beijing 100049, China
  • 7Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

  • *Y. K. S. and G. W. W. contributed equally to this work.
  • yinzhiping@bnu.edu.cn
  • lzh17@mail.sim.ac.cn
  • §dwshen@mail.sim.ac.cn

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Issue

Vol. 124, Iss. 5 — 7 February 2020

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