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Magnon Valve Effect between Two Magnetic Insulators

H. Wu, L. Huang, C. Fang, B. S. Yang, C. H. Wan, G. Q. Yu, J. F. Feng, H. X. Wei, and X. F. Han
Phys. Rev. Lett. 120, 097205 – Published 2 March 2018
Physics logo See Focus story: A Trio of Magnon Transistors
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Abstract

The key physics of the spin valve involves spin-polarized conduction electrons propagating between two magnetic layers such that the device conductance is controlled by the relative magnetization orientation of two magnetic layers. Here, we report the effect of a magnon valve which is made of two ferromagnetic insulators (YIG) separated by a nonmagnetic spacer layer (Au). When a thermal gradient is applied perpendicular to the layers, the inverse spin Hall voltage output detected by a Pt bar placed on top of the magnon valve depends on the relative orientation of the magnetization of two YIG layers, indicating the magnon current induced by the spin Seebeck effect at one layer affects the magnon current in the other layer separated by Au. We interpret the magnon valve effect by the angular momentum conversion and propagation between magnons in two YIG layers and conduction electrons in the Au layer. The temperature dependence of the magnon valve ratio shows approximately a power law, supporting the above magnon-electron spin conversion mechanism. This work opens a new class of valve structures beyond the conventional spin valves.

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  • Received 19 September 2017
  • Revised 10 December 2017

DOI:https://doi.org/10.1103/PhysRevLett.120.097205

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter & Materials Physics

Focus

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A Trio of Magnon Transistors

Published 2 March 2018

Three new transistors for spin-based currents may lead to a new type of circuitry that is faster and more efficient than traditional electronics.

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Authors & Affiliations

H. Wu, L. Huang, C. Fang, B. S. Yang, C. H. Wan, G. Q. Yu, J. F. Feng, H. X. Wei, and X. F. Han*

  • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

  • *Corresponding author. xfhan@iphy.ac.cn

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Vol. 120, Iss. 9 — 2 March 2018

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