Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

Aurelien Botman, Alan Bahm, Steven Randolph, Marcus Straw, and Milos Toth
Phys. Rev. Lett. 111, 135503 – Published 25 September 2013
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Abstract

Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga+ beam in a gaseous XeF2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-filled, gallium fluoride tapered tube (sheath). The structures form through an interdependent, self-ordering cycle of liquid cap growth and solid sheath formation. The sheath and core growth mechanisms are not catalytic, but instead consistent with a model of ion-induced Ga and F generation, Ga transport through surface diffusion, and heterogeneous sputtering caused by self-masking of the tapered pillars.

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  • Received 2 May 2013

DOI:https://doi.org/10.1103/PhysRevLett.111.135503

© 2013 American Physical Society

Authors & Affiliations

Aurelien Botman

  • FEI Company, 5350 Northeast Dawson Creek Drive, Hillsboro, Oregon 97214-5793, USA

Alan Bahm

  • FEI Company, 5350 Northeast Dawson Creek Drive, Hillsboro, Oregon 97214-5793, USA
  • School of Physics and Advanced Materials, University of Technology, Sydney, Post Office Box 123, Broadway, New South Wales 2007, Australia

Steven Randolph and Marcus Straw

  • FEI Company, 5350 Northeast Dawson Creek Drive, Hillsboro, Oregon 97214-5793, USA

Milos Toth*

  • School of Physics and Advanced Materials, University of Technology, Sydney, Post Office Box 123, Broadway, New South Wales 2007, Australia

  • *Milos.Toth@uts.edu.au

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Vol. 111, Iss. 13 — 27 September 2013

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