Tunable Infrared Phonon Anomalies in Trilayer Graphene

Chun Hung Lui (呂振鴻), Emmanuele Cappelluti, Zhiqiang Li, and Tony F. Heinz
Phys. Rev. Lett. 110, 185504 – Published 1 May 2013
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Abstract

Trilayer graphene in both ABA (Bernal) and ABC (rhombohedral) stacking sequences is shown to exhibit intense infrared absorption from in-plane optical phonons. The phonon feature, lying at 1580cm1, changes strongly with electrostatic gating. For ABC-stacked graphene trilayers, we observed a large enhancement in phonon absorption amplitude, as well as softening of the phonon mode, as the Fermi level is tuned away from charge neutrality. A similar, but substantially weaker, effect is seen in samples with the more common ABA stacking order. The strong infrared response of the optical phonons and the pronounced variation with electrostatic gating and stacking order reflect the interactions of the phonons and electronic excitations in the two systems. The key experimental findings can be reproduced within a simplified charged-phonon model that considers the influence of charging through Pauli blocking of the electronic transitions.

  • Received 21 January 2013

DOI:https://doi.org/10.1103/PhysRevLett.110.185504

© 2013 American Physical Society

Authors & Affiliations

Chun Hung Lui (呂振鴻)1, Emmanuele Cappelluti2,3, Zhiqiang Li1, and Tony F. Heinz1

  • 1Departments of Physics and Electrical Engineering, Columbia University, 538 West 120th Street, New York, New York 10027, USA
  • 2Istituto dei Sistemi Complessi (ISC), CNR, U.O.S. Sapienza, v. dei Taurini 19, 00185 Rome, Italy
  • 3Instituto de Ciencia de Materiales de Madrid (ICMM), CSIC, Cantoblanco, 28049 Madrid, Spain

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Vol. 110, Iss. 18 — 3 May 2013

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