Energy-Gap Opening in a Bi(110) Nanoribbon Induced by Edge Reconstruction

Jia-Tao Sun, Han Huang, Swee Liang Wong, H.-J. Gao, Yuan Ping Feng, and Andrew Thye Shen Wee
Phys. Rev. Lett. 109, 246804 – Published 11 December 2012
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Scanning tunnelling microscopy and spectroscopy experiments complemented by first-principles calculations have been conducted to study the electronic structure of 4 monolayer Bi(110) nanoribbons on epitaxial graphene on silicon carbide [4HSiC(0001)]. In contrast with the semimetal property of elemental bismuth, an energy gap of 0.4 eV is measured at the centre of the Bi(110) nanoribbons. Edge reconstructions, which can facilitate the edge strain energy release, are found to be responsible for the band gap opening. The calculated density of states around the Fermi level are decreased quickly to zero from the terrace edge to the middle of a Bi(110) nanoribbon potentially signifying a spatial metal-to-semiconductor transition. This study opens new avenues for room-temperature bismuth nanoribbon-based electronic devices.

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  • Received 16 February 2012


© 2012 American Physical Society

Authors & Affiliations

Jia-Tao Sun1,5, Han Huang2,3,*, Swee Liang Wong2,4, H.-J. Gao5, Yuan Ping Feng2, and Andrew Thye Shen Wee2,3,4,*

  • 1Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
  • 2Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
  • 3Graphene Research Centre, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore
  • 4NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore 117456, Singapore
  • 5Nanoscale Physics and Devices Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

  • *

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Vol. 109, Iss. 24 — 14 December 2012

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