Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

Jian Zhu, J. A. Katine, Graham E. Rowlands, Yu-Jin Chen, Zheng Duan, Juan G. Alzate, Pramey Upadhyaya, Juergen Langer, Pedram Khalili Amiri, Kang L. Wang, and Ilya N. Krivorotov
Phys. Rev. Lett. 108, 197203 – Published 9 May 2012
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We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

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  • Received 31 August 2011


© 2012 American Physical Society

Authors & Affiliations

Jian Zhu1, J. A. Katine2, Graham E. Rowlands1, Yu-Jin Chen1, Zheng Duan1, Juan G. Alzate3, Pramey Upadhyaya3, Juergen Langer4, Pedram Khalili Amiri3, Kang L. Wang3, and Ilya N. Krivorotov1

  • 1Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
  • 2Hitachi Global Storage Technologies, 3403 Yerba Buena Road, San Jose, California 95135, USA
  • 3Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
  • 4Singulus Technologies, 63796 Kahl am Main, Germany

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Vol. 108, Iss. 19 — 11 May 2012

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