Structure-Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene

Zhiqiang Li, Chun Hung Lui, Emmanuele Cappelluti, Lara Benfatto, Kin Fai Mak, G. L. Carr, Jie Shan, and Tony F. Heinz
Phys. Rev. Lett. 108, 156801 – Published 10 April 2012
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The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking. These observations reflect the strong coupling between phonons and interband electronic transitions in these systems and the distinctive variation in the joint density of electronic states in samples of differing thickness and stacking order.

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  • Received 20 September 2011


© 2012 American Physical Society

Authors & Affiliations

Zhiqiang Li1, Chun Hung Lui1, Emmanuele Cappelluti2,3, Lara Benfatto3,4, Kin Fai Mak1, G. L. Carr5, Jie Shan6, and Tony F. Heinz1,*

  • 1Departments of Physics and Electrical Engineering, Columbia University, 538 West 120th Street, New York, New York 10027, USA
  • 2Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Cantoblanco, Madrid, Spain
  • 3Istituto dei Sistemi Complessi, U.O.S. Sapienza, CNR, via dei Taurini 19, 00185 Rome, Italy
  • 4Dipartimento di Fisica, Università “La Sapienza”, P.le A. Moro 2, 00185 Rome, Italy
  • 5Photon Sciences, Brookhaven National Laboratory, Upton, New York 11973, USA
  • 6Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USA

  • *Corresponding author:

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Vol. 108, Iss. 15 — 13 April 2012

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