Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3

J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, and L. Lu
Phys. Rev. Lett. 105, 176602 – Published 19 October 2010

Abstract

We report that Bi2Se3 thin films can be epitaxially grown on SrTiO3 substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.

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  • Received 7 March 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.176602

© 2010 The American Physical Society

Authors & Affiliations

J. Chen1, H. J. Qin1, F. Yang1, J. Liu1, T. Guan1, F. M. Qu1, G. H. Zhang1, J. R. Shi2, X. C. Xie1,2, C. L. Yang1, K. H. Wu1,*, Y. Q. Li1,†, and L. Lu1

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2International Center for Quantum Materials, Peking University, Beijing 100871, China

  • *khwu@iphy.ac.cn
  • yqli@iphy.ac.cn

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Vol. 105, Iss. 17 — 22 October 2010

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