Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3

J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R. Shi, X. C. Xie, C. L. Yang, K. H. Wu, Y. Q. Li, and L. Lu
Phys. Rev. Lett. 105, 176602 – Published 19 October 2010


We report that Bi2Se3 thin films can be epitaxially grown on SrTiO3 substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 7 March 2010


© 2010 The American Physical Society

Authors & Affiliations

J. Chen1, H. J. Qin1, F. Yang1, J. Liu1, T. Guan1, F. M. Qu1, G. H. Zhang1, J. R. Shi2, X. C. Xie1,2, C. L. Yang1, K. H. Wu1,*, Y. Q. Li1,†, and L. Lu1

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2International Center for Quantum Materials, Peking University, Beijing 100871, China

  • *

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand

Vol. 105, Iss. 17 — 22 October 2010

Reuse & Permissions
Access Options
Heating up of Superconductors
January 27, 2017

This collection marks the 30th anniversary of the discovery of high-temperature superconductors. The papers selected highlight some of the advances that have been made to date, both in understanding why these compounds behave in the way they do, and in utilizing them in applications. The papers included in the collection have been made free to read.

APS and CERN Sign Open Access Agreement for SCOAP3

APS and CERN, the host organization of SCOAP3 (Sponsoring Consortium for Open Access Publishing in Particle Physics), have signed an agreement to make the high-energy physics (HEP) articles published in three leading APS journals open access beginning January 1, 2018. This agreement acts to support the publishing of open access content for wider benefit of the HEP community.

Authorization Required




Sign up to receive regular email alerts from Physical Review Letters

Log In



Article Lookup

Paste a citation or DOI

Enter a citation