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    Exciton-Anyon Binding in Fractional Chern Insulators: Spectral Fingerprints

    Tianhong Lu and Luiz H. Santos

    • Department of Physics, Emory University, 400 Dowman Drive, Atlanta, Georgia 30322, USA

    Phys. Rev. Lett. 136, 256605 – Published 26 June, 2026

    DOI: https://doi.org/10.1103/8bp8-g8g4

    Abstract

    Transition-metal dichalcogenides (TMDs) uniquely combine topological electronic states realized without external magnetic fields with a strong optical response arising from long-lived excitons. Motivated by this confluence, we investigate an interacting fermion-boson system formed by coupling an exciton to a quasihole of a fractional Chern insulator (FCI) at filling fraction 1/3. We introduce a kagome-lattice fermion-boson model hosting an electronic FCI and a mobile exciton whose dispersion is tunable from a parabolic band to a flat band. Using exact diagonalization, we demonstrate the emergence of exciton-quasihole bound states controlled by the repulsive electron-exciton interaction VFB and the exciton kinetic energy tB. These states appear as low-lying levels in the fermion-boson spectrum, well separated from the scattering continuum, and arise despite repulsive interactions due to a residual attraction to the local charge depletion associated with a quasihole. Reducing tB enhances this effect by favoring interaction-dominated binding. Our results provide a model description of moiré TMD heterostructures, including fractional Chern insulating twisted bilayer MoTe2 proximitized by excitonic TMD heterobilayers, where we estimate exciton-quasihole binding energy scales of 0.8–1.2 meV, placing these effects within reach of photoluminescence spectroscopy.

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