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    Ballast Charges for Semiconductor Spin Qubits

    Yujun Choi1,2,*, John M. Nichol3, and Edwin Barnes1,2

    • 1Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA
    • 2Virginia Tech Center for Quantum Information Science and Engineering, Blacksburg, Virginia 24061, USA
    • 3Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

    • *Contact author: yujunchoi@vt.edu

    Phys. Rev. Lett. 134, 237002 – Published 11 June, 2025

    DOI: https://doi.org/10.1103/81qt-48bl

    Abstract

    Semiconductor spin qubits are an attractive platform for quantum computing, but their performance is degraded primarily by fluctuating electromagnetic environments. We introduce the concept of ballast charges, which are induced charges on the surface of an additional screening layer situated below the qubits. The counteractive behavior of these charges can significantly reduce the power spectral density associated with fluctuations from two-level systems that contribute to charge noise. Our simulations show that the dephasing time of a single-spin qubit in a Si/SiGe device increases by a factor of 4 to 6 on average when using this method. We also discuss the physical implementation and potential challenges of this approach.

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