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Electrical Control of Ultrafast Magnetic Speeds in Graphene Spin Field-Effect Junctions

David Muradas-Belinchón1,*, Suchetana Mukhopadhyay2,3,*, Francesco Foggetti1, Surya N. Panda2, Olof Karis1, Peter M. Oppeneer1, Anjan Barman2,†, and M. Venkata Kamalakar1,‡

  • *These authors contributed equally to this work.
  • †Contact author: abarman@bose.res.in
  • ‡Contact author: venkata.mutta@physics.uu.se

Phys. Rev. Lett. 135, 097001 – Published 28 August, 2025

DOI: https://doi.org/10.1103/7ldk-csp9

Abstract

We demonstrate ultrafast graphene spin-field-effect junctions, where gate-tunable superdiffusive spin currents across graphene-ferromagnet interfaces enable electric field control of magnetization dynamics in the ferromagnet. By electrostatically tuning the Fermi level in graphene underlying a cobalt thin film, we modulate the ultrafast spin transport across graphene-cobalt interfaces, reducing femtosecond laser-induced demagnetization time from 203 fs in bare cobalt thin films to 93 fs, a more than 100% increase in the rate of magnetization quenching. Supported by superdiffusive spin transport calculations, our findings unlock field-tunable magnetic speeds in devices, paving the way for innovations in subpicosecond spintronic memory-logic operations. Furthermore, this work creates new possibilities for electrical modulation of spin dynamics and ultrafast spin injection into two-dimensional quantum materials, with potential for next-generation quantum sensors and faster magnetic technologies.

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