${\text{MoTe}}_2$, a promising material for flexible electronics and straintronics, exhibits rapid strain-induced conductivity changes. However, the underlying mechanisms remain poorly understood. Here, through deep-learning molecular dynamics and density-functional theory calculations, we identify a reversible phase transition between the semiconductive ${\mathrm{T}}_{\mathrm{b}}^{\prime }$ phase and the semimetallic ${\mathrm{T}}^{*}$ phase as the key mechanism driving this phenomenon. This transition, which is highly sensitive to the direction of applied strain, provides valuable insights for optimizing ${\text{MoTe}}_2$-based high-frequency nanoelectronic devices and reducing fabrication-related failures.

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• Dynamical phase transitions
• Resistive switching
• Strain
• Nanomechanical devices
• Transition metal dichalcogenides
• Density functional calculations
• Molecular dynamics
• Training models