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    Photonic Bilayer Chern Insulator with Corner States

    Subhaskar Mandal1,2,*, Ziyao Wang3,*, Rimi Banerjee2, Hau Tian Teo2, Minggui Wei2, Peiheng Zhou4, Xiang Xi3,†, Zhen Gao3,‡, Gui-Geng Liu5,§ et al.

    Baile Zhang2,6,∥

    • 1Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076, India
    • 2Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
    • 3State Key Laboratory of Optical Fiber and Cable Manufacturing Technology, Department of Electronic and Electrical Engineering, Guangdong Key Laboratory of Integrated Optoelectronics Intellisense, Southern University of Science and Technology, Shenzhen 518055, China
    • 4National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
    • 5Department of Electronic and Information Engineering, School of Engineering, Westlake University, Hangzhou 310030, China
    • 6Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore

    • *These authors contributed equally to this work.
    • †Contact author: xix@sustech.edu.cn
    • ‡Contact author: gaoz@sustech.edu.cn
    • §Contact author: liuguigeng@westlake.edu.cn
    • ∥Contact author: blzhang@ntu.edu.sg

    Phys. Rev. Lett. 135, 016903 – Published 2 July, 2025

    DOI: https://doi.org/10.1103/33mm-mx88

    Abstract

    Photonic Chern insulators can be implemented in gyromagnetic photonic crystals with broken time-reversal (TR) symmetry. They exhibit gapless chiral edge states (CESs), enabling unidirectional propagation and demonstrating exceptional resilience to localization even in the presence of defects or disorders. However, when two Chern insulators with opposite Chern numbers are stacked together, this one-way nature can be nullified, causing the originally gapless CESs to become gapped. Recent theoretical works have proposed achieving such a topological phase transition in condensed matter systems using antiferromagnetic thin films such as MnBi2Te4 or by coupling two quantum spin/anomalous Hall insulators, but these approaches have yet to be realized experimentally. In a bilayer gyromagnetic photonic crystal arranged in an antiferromagnetic layer configuration, our experimental observations reveal that interlayer coupling initiates a transition from a Chern insulating phase to a higher-order topological phase. This transition results in the gapping of CESs and triggers the emergence of corner states within the band gap. The corner mode energy within this gap originates from CES interactions, forming a Jackiw-Rebbi-type topological domain wall mode at the corner, which is expected to remain within the bulk band gap without relying on local symmetries such as chiral or particle-hole symmetry. These states exhibit heightened resilience against defects, distinguishing them from their TR-symmetric counterparts.

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