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Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding

Jie Pan1, Huanhuan Wang1, Lin Zou1, Xiaoyu Wang1, Lihao Zhang1, Xueyan Dong1, Haibo Xie1, Yi Ding1, Yuze Zhang1 et al.

Takashi Taniguchi2, Kenji Watanabe3, Shuxi Wang1,*, and Zhe Wang1,†

  • *Contact author: shuxi.wang@xjtu.edu.cn
  • †Contact author: zhe.wang@xjtu.edu.cn

Phys. Rev. Lett. 135, 126603 – Published 16 September, 2025

DOI: https://doi.org/10.1103/26q7-dsm1

Abstract

Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilayers. Here, we theoretically demonstrate that controlled interlayer sliding in bilayer graphene induces Berry curvature reversals, leading to topological states confined within a one-dimensional moiré channel. We experimentally realize interlayer sliding by bending the bilayer graphene geometry across a nanoridge. Systematic electronic transport measurements reveal topological valley transport when the Fermi energy resides within the band gap, consistent with theoretical predictions of eight topological channels. Our findings establish interlayer sliding as a powerful tool for tuning the electronic properties of bilayer graphene and underscore its potential for broad application across 2D material systems.

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synopsis

Bilayer Graphene Slides into Action

Published 16 September, 2025

Sliding one layer of bilayer graphene over the other provides a powerful way to tune the material’s electronic properties.

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