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    Fluctuation-Induced Giant Magnetoresistance in Charge-Neutral Graphene

    A. Levchenko1, E. Kirkinis2, and A. V. Andreev3

    Phys. Rev. Lett. 136, 126301 – Published 24 March, 2026

    DOI: https://doi.org/10.1103/12ft-16kb

    Abstract

    The Johnson-Nyquist noise associated with the intrinsic conductivity of the electron liquid induces fluctuations of the electron density in charge-neutral graphene devices. In the presence of external electric and magnetic fields, the fluctuations of charge density and electric current induce a fluctuating hydrodynamic flow. We show that the resulting advection of charge produces a fluctuation contribution to the macroscopic conductivity of the system, σfl, and develop a quantitative theory of σfl. At zero magnetic field, σfl diverges logarithmically with the system size and becomes rapidly suppressed at relatively small fields. This results in giant magnetoresistance of the system.

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