Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors

M. Aldegunde, Natalia Seoane, A. J. García-Loureiro, P. V. Sushko, A. L. Shluger, J. L. Gavartin, K. Kalna, and A. Asenov
Phys. Rev. E 77, 056702 – Published 8 May 2008

Abstract

We present a methodology for the finite-element discretization of nanoscaled semiconductor devices with atomic resolution. The meshing strategy is based on the use of patterns to decompose the unit cell of the underlying crystallographic structures producing unstructured tetrahedral meshes. The unit cells of the bulk semiconductors and, more importantly, of the interfaces between the substrate and the gate dielectric have been extracted from classical molecular dynamics and density functional theory simulations. A Monte Carlo approach has been then used to place the dopants in nodes of the crystal, replacing silicon atoms. The thus created “atomistic” meshes are used to simulate an ensemble of microscopically different double-gate Si metal-oxide-semiconductor field-effect transistors and the transition region at the Si/SiO2 interface. In addition, a methodology to approximate amorphous dielectrics is also presented.

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  • Received 23 November 2007

DOI:https://doi.org/10.1103/PhysRevE.77.056702

©2008 American Physical Society

Authors & Affiliations

M. Aldegunde*, Natalia Seoane, and A. J. García-Loureiro

  • Departamento de Electrónica y Computación, Universidad de Santiago de Compostela, 15782 Santiago de Compostela, Spain

P. V. Sushko and A. L. Shluger

  • Department of Physics & Astronomy, University College London, London WC1E 6BT, United Kingdom

J. L. Gavartin

  • Accelrys, 334 Cambridge Science Park, Cambridge, CB4 0WN, United Kingdom

K. Kalna and A. Asenov

  • Department of Electronics & Electrical Engineering, University of Glasgow, Glasgow G12 8LT, United Kingdom

  • *manuelxx@usc.es

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Vol. 77, Iss. 5 — May 2008

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