A silicon-based single-electron interferometer coupled to a fermionic sea

Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Rubén M. Otxoa, Franco Nori, John J. L. Morton, and M. Fernando Gonzalez-Zalba
Phys. Rev. B 97, 045405 – Published 3 January 2018
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Abstract

We study Landau-Zener-Stückelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterize the coherent charge-qubit dynamics in the strong-driving regime. The device is realized within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous nondemolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multipassage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realized, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realized within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogs of optical interferometry within a CMOS transistor.

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  • Received 6 September 2017
  • Revised 12 December 2017

DOI:https://doi.org/10.1103/PhysRevB.97.045405

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Anasua Chatterjee1,*, Sergey N. Shevchenko2,3,4, Sylvain Barraud5, Rubén M. Otxoa6,7,8, Franco Nori2,9, John J. L. Morton1,10, and M. Fernando Gonzalez-Zalba6,†

  • 1London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
  • 2Center for Emergent Matter Science, RIKEN, Wako-shi, Saitama 351-0198, Japan
  • 3B. Verkin Institute for Low Temperature Physics and Engineering, Kharkov 61103, Ukraine
  • 4V. Kazarin Kharkov National University, Kharkov 61022, Ukraine
  • 5CEA/LETI-MINATEC, CEA-Grenoble, 38000 Grenoble, France
  • 6Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
  • 7Donostia International Physics Center, Donostia–San Sebastian 20018, Spain
  • 8Department of Material Physics, Universidad del Pais Vasco, UPV/EHU, San Sebastian 20018, Spain
  • 9Physics Department, University of Michigan, Ann Arbor, Michigan 48109-1040, USA
  • 10Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom

  • *anasua.chatterjee@ucl.ac.uk
  • mg507@cam.ac.uk

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Issue

Vol. 97, Iss. 4 — 15 January 2018

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