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Origin of the kink in the band dispersion of the ferromagnetic perovskite SrRuO3: Electron-phonon coupling

H. F. Yang, Z. T. Liu, C. C. Fan, Q. Yao, P. Xiang, K. L. Zhang, M. Y. Li, H. Li, J. S. Liu, D. W. Shen, and M. H. Jiang
Phys. Rev. B 93, 121102(R) – Published 4 March 2016

Abstract

Perovskite SrRuO3, a prototypical conductive ferromagnetic oxide, exhibits a kink in its band dispersion signaling the unusual electron dynamics therein. However, the origin of this kink remains elusive. By taking advantage of the combo of reactive molecular beam epitaxy and in situ angle-resolved photoemission spectroscopy, we systematically studied the evolution of the low-energy electronic structure of SrRuO3 films with thickness thinning down to a nearly two-dimensional limit in a well-controlled way. The kink structure persists even in the four-unit-cell-thick film. Moreover, through quantitative self-energy analysis, we observed the negligible thickness dependence of the binding energy of the kink, which is in sharp contrast to the downward trend of the Curie temperature with reducing the film thickness. Together with previously reported transport and Raman studies, this finding suggests that the kink of perovskite SrRuO3 should originate from the electron-phonon coupling rather than magnetic collective modes, and the in-plane phonons may play a dominant role. Considering such a kink structure of SrRuO3 is similar to those of many other correlated oxides, we suggest the possible ubiquity of the coupling of electrons to oxygen-related phonons in correlated oxides.

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  • Received 24 January 2016

DOI:https://doi.org/10.1103/PhysRevB.93.121102

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter & Materials Physics

Authors & Affiliations

H. F. Yang1,2, Z. T. Liu1,2, C. C. Fan1,2, Q. Yao1,3, P. Xiang1,2, K. L. Zhang1,2, M. Y. Li1,2, H. Li1,2, J. S. Liu1,2, D. W. Shen1,2,*, and M. H. Jiang1

  • 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
  • 2CAS-Shanghai Science Research Center, Shanghai 201203, China
  • 3State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, China

  • *dwshen@mail.sim.ac.cn

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Vol. 93, Iss. 12 — 15 March 2016

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