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Perfect interferenceless absorption at infrared frequencies by a van der Waals crystal

D. G. Baranov, J. H. Edgar, Tim Hoffman, Nabil Bassim, and Joshua D. Caldwell
Phys. Rev. B 92, 201405(R) – Published 9 November 2015

Abstract

Traditionally, efforts to achieve perfect absorption have required the use of complicated metamaterial-based structures as well as relying on destructive interference to eliminate back reflections. Here, we have demonstrated both theoretically and experimentally that such perfect absorption can be achieved using a naturally occurring material, hexagonal boron nitride (hBN) due to its high optical anisotropy without the requirement of interference effects to absorb the incident field. This effect was observed for p-polarized light within the mid-infrared spectral range, and we provide the full theory describing the origin of the perfect absorption as well as the methodology for achieving this effect with other materials. Furthermore, while this is reported for the uniaxial crystal hBN, this is equally applicable to biaxial crystals and more complicated crystal structures. Interferenceless absorption is of fundamental interest to the field of optics; moreover, such materials may provide additional layers of flexibility in the design of frequency selective surfaces, absorbing coatings, and sensing devices operating in the infrared.

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  • Received 12 August 2015
  • Revised 13 October 2015

DOI:https://doi.org/10.1103/PhysRevB.92.201405

©2015 American Physical Society

Authors & Affiliations

D. G. Baranov1,2,*, J. H. Edgar3, Tim Hoffman3, Nabil Bassim4, and Joshua D. Caldwell4

  • 1Moscow Institute of Physics and Technology, 9 Institutskiy per., Dolgoprudny 141700, Russia
  • 2All-Russia Research Institute of Automatics, 22 Sushchevskaya, Moscow 127055, Russia
  • 3Kansas State University, Department of Chemical Engineering, Durland Hall, Manhattan, Kansas 66506, USA
  • 4U.S. Naval Research Laboratory, 4555 Overlook Ave, S.W., Washington, D.C. USA

  • *denis.baranov@phystech.edu

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Issue

Vol. 92, Iss. 20 — 15 November 2015

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