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Spin band-gap renormalization and hole spin dynamics in Ge/SiGe quantum wells

C. Lange, G. Isella, D. Chrastina, F. Pezzoli, N. S. Köster, R. Woscholski, and S. Chatterjee
Phys. Rev. B 85, 241303(R) – Published 8 June 2012

Abstract

We experimentally determine a spin-dependent band-gap renormalization of 60 μeV, and the hole spin relaxation dynamics in highly excited, strained Ge/SiGe quantum wells using a differential pump-probe technique which exploits the indirect nature of the band structure. Compressive strain lifts the degeneracy between heavy- and light-hole subbands, and both are addressed individually with our spectrally and polarization-resolved approach. We calculate that in our quantum wells, contrary to bulk Ge, we excite almost pure spin eigenstates so that a hole spin polarization exceeding 80% is obtained. A hole spin relaxation time of 2.1 ps is observed at 10 K.

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  • Received 20 February 2012

DOI:https://doi.org/10.1103/PhysRevB.85.241303

©2012 American Physical Society

Authors & Affiliations

C. Lange1,*, G. Isella2, D. Chrastina2, F. Pezzoli3, N. S. Köster4, R. Woscholski4, and S. Chatterjee4

  • 1Department of Physics, 60 Saint George Street, University of Toronto, Toronto, Ontario, Canada M5S 1A7
  • 2L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy
  • 3L-NESS, Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via Cozzi 53, I-20125 Milano, Italy
  • 4Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany

  • *clange@physics.utoronto.ca

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Issue

Vol. 85, Iss. 24 — 15 June 2012

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