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Anomalous paramagnetism in graphene on hexagonal boron nitride substrates

Xuli Ding, Hong Sun, Xiaoming Xie, Haicang Ren, Fuqiang Huang, and Mianheng Jiang
Phys. Rev. B 84, 174417 – Published 14 November 2011

Abstract

We report the static magnetization measurements of a few graphene layers on hexagonal boron nitride substrates (gra/h-BN) prepared by chemical vapor deposition. No ferromagnetic signal is detected for the gra/h-BN structures at temperatures between 5 and 300 K. At high temperatures (T>100 K), the gra/h-BN structures are diamagnetic with mass magnetic susceptibilities independent of temperature and close to, or slightly larger than, that of h-BN substrates. At low temperatures (T<20 K), the gra/h-BN structures exhibit paramagnetic responses, which depend sensitively on the growth time of the graphene layers. The origin of this paramagnetism is attributed to the localized spins of the point defects in the graphene layers. The angular momentum number of these spins is J=1/2 and is derived by fitting the magnetization data after subtraction of the diamagnetic background of the h-BN substrates to the standard Brillouin functions. A saturated mass magnetization of about 0.13 to 0.25 emu/g at T=5 K is estimated for our gra/h-BN samples. At temperatures between 20 and 50 K, the measured magnetic susceptibilities of the gra/h-BN samples deviate significantly from that of a Curie-type paramagnetic material. A local maximum is found in the temperature dependence of the magnetic susceptibilities of our gra/h-BN samples. Several possible explanations, including the Ruderman-Kittle-Kasuya-Yosida interactions among local magnetic moments and the itinerant electrons in the graphene/h-BN interfaces in our gra/h-BN samples, are discussed and compared to the experimental results.

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  • Received 20 June 2011

DOI:https://doi.org/10.1103/PhysRevB.84.174417

©2011 American Physical Society

Authors & Affiliations

Xuli Ding1,2, Hong Sun1,3,*, Xiaoming Xie2,†, Haicang Ren4, Fuqiang Huang5, and Mianheng Jiang2,1

  • 1Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China
  • 2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, 865 Changning Road, Shanghai 200050, People's Republic of China
  • 3Key Laboratory of Artificial Structures and Quantum Control, Ministry of Education, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, People's Republic of China
  • 4Member of the Adjunct Faculty, The Rockefeller University, 1230 York Avenue, New York, New York 10065, USA
  • 5CAS Key Laboratory of Materials for Energy Conservation, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China

  • *hsun@sjtu.edu.cn
  • xmxie@mail.sim.ac.cn

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Issue

Vol. 84, Iss. 17 — 1 November 2011

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