Band-gap transition induced by interlayer van der Waals interaction in MoS2

S. W. Han, Hyuksang Kwon, Seong Keun Kim, Sunmin Ryu, Won Seok Yun, D. H. Kim, J. H. Hwang, J.-S. Kang, J. Baik, H. J. Shin, and S. C. Hong
Phys. Rev. B 84, 045409 – Published 6 July 2011

Abstract

We have investigated the electronic structures of single- and double-layered MoS2, composing of heterojunction structures such as graphene, MoS2, and SiO2 and MoS2 and SiO2, using scanning photoelectron microscopy. Negative shifts of both core levels and valence bands toward the Fermi energy have been observed. In connection with first-principles calculations, we have confirmed that the direct gap of single-layer MoS2 is changed to an indirect gap by stacking additional layers via van der Waals interlayer interactions.

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  • Received 12 April 2011

DOI:https://doi.org/10.1103/PhysRevB.84.045409

©2011 American Physical Society

Authors & Affiliations

S. W. Han1, Hyuksang Kwon2, Seong Keun Kim2, Sunmin Ryu3, Won Seok Yun1, D. H. Kim4, J. H. Hwang4, J.-S. Kang4, J. Baik5, H. J. Shin5, and S. C. Hong1,*

  • 1Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Korea
  • 2Deparment of Chemistry and Department of Biophysics and Chemical Biology, Seoul National University, Seoul 151-747, Korea
  • 3Department of Applied Chemistry, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea
  • 4Department of Physics, The Catholic University of Korea, Bucheon 420-743, Korea
  • 5Pohang Accelerator Laboratory (PAL), POSTECH, Pohang 790-784, Korea

  • *schong@ulsan.ac.kr

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Issue

Vol. 84, Iss. 4 — 15 July 2011

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