Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetization

F. Garcia-Sanchez, H. Szambolics, A. P. Mihai, L. Vila, A. Marty, J.-P. Attané, J.-Ch. Toussaint, and L. D. Buda-Prejbeanu
Phys. Rev. B 81, 134408 – Published 7 April 2010


In this work, we present a micromagnetic study of a magnetic domain wall dynamics influenced by magnetic fields and/or spin-polarized currents in systems characterized by perpendicular magnetization including crystalline defects. The dynamics in two different systems is studied: one showing the effect of defects in the flow regime, and the second one presenting the thermally activated depinning from a single defect. In the latter case, the thermal depinning can be analyzed within the framework of a single energy barrier process. In such situation, the current density can be assimilated to an applied field. We found that the energy barrier depends linearly on the applied field and on the injected current.

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  • Received 16 November 2009


©2010 American Physical Society

Authors & Affiliations

F. Garcia-Sanchez1, H. Szambolics1,2, A. P. Mihai3,4, L. Vila3,4, A. Marty3,4, J.-P. Attané3,4, J.-Ch. Toussaint2,5, and L. D. Buda-Prejbeanu1

  • 1SPINTEC, UMR-8191, CEA-INAC/CNRS/UJF-Grenoble 1/Grenoble-INP, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
  • 2Institut Néel, CNRS, 25 Rue des Martyrs, 38042 Grenoble, France
  • 3CEA, Inac, SP2M, Nanostructures et Magnétisme, 38054 Grenoble, France
  • 4Université Joseph Fourier, BP 53-38041 Grenoble, France
  • 5Institute Polytechnique de Grenoble, 46, Avenue Félix Viallet, 38031 Grenoble, France

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Vol. 81, Iss. 13 — 1 April 2010

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