Comparison of ultrafast carrier thermalization in GaxIn1xAs and Ge quantum wells

C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, B. Kunert, and W. Stolz
Phys. Rev. B 81, 045320 – Published 26 January 2010


The thermalization of photoexcited carriers is investigated using femtosecond pump-probe spectroscopy in both (GaIn)As and Ge quantum wells. In both materials a nonthermal electron distribution is observed. The continuous relaxation from the point of injection toward the ground state and the thermalization of the carrier distribution are monitored on a time scale of up to 500 fs at room temperature. Carriers in (GaIn)As thermalize within 300 fs when injected with an excess energy of 250 meV. Separate carrier distributions for the heavy-hole and light-hole systems are found since the angular momentum transfer required for a transition is slow. Thermalization in Ge is found to be slightly slower in comparison due to the lack of Fröhlich interaction.

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  • Received 24 June 2009


©2010 American Physical Society

Authors & Affiliations

C. Lange1,*, N. S. Köster1, S. Chatterjee1, H. Sigg2, D. Chrastina3, G. Isella3, H. von Känel3, B. Kunert1, and W. Stolz1

  • 1Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany
  • 2Laboratory for Micro and Nanotechnology, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
  • 3Dipartimento di Fisica del Politecnico di Milano, CNISM and L-NESS, Polo di Como, via Anzani 42, I-22100 Como, Italy

  • *

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Vol. 81, Iss. 4 — 15 January 2010

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