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    Incorporation and localization of substitutional Mn2+ ions in cubic ZnS quantum dots

    S. V. Nistor1, M. Stefan1, L. C. Nistor1, E. Goovaerts2, and G. Van Tendeloo3

    • 1National Institute of Materials Physics, P.O. Box MG-7, Magurele-Ilfov, 077125 Romania
    • 2Department of Physics–ECMP, University of Antwerp, Universiteitsplein 1, 2610 Antwerp, Belgium
    • 3EMAT–University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium

    Phys. Rev. B 81, 035336 – Published 29 January, 2010

    DOI: https://doi.org/10.1103/PhysRevB.81.035336

    Abstract

    Multifrequency electron paramagnetic resonance (EPR) and high resolution transmission electron microscopy (HRTEM) investigations were performed on small (2 nm) cubic ZnS nanocrystals (quantum dots–QDs) doped with 0.2% mol Mn2+, self-assembled into a mesoporous structure. The EPR data analysis shows that the substitutional Mn2+ ions are localized at Zn2+ sites subjected to a local axial lattice distortion, resulting in the observed zero-field-splitting parameter |D|=41×104cm1. The local distortion is attributed to the presence in the second shell of ligands of a stacking fault or twin, which alters the normal stacking sequence of the cubic structure. The HRTEM results confirm the presence of such extended planar defects in a large percentage of the investigated QDs, which makes possible the proposed substitutional Mn2+ impurity ions localization model. Based on these results it is suggested that the high doping levels of Mn2+ ions observed in cubic ZnS and possible in other II-VI semiconductor QDs prepared at low temperatures can be explained by the assistance of the extended lattice defects in the impurities incorporation.

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