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Single-crystal growth and physical properties of the layered arsenide BaRh2As2

Yogesh Singh, Y. Lee, S. Nandi, A. Kreyssig, A. Ellern, S. Das, R. Nath, B. N. Harmon, A. I. Goldman, and D. C. Johnston
Phys. Rev. B 78, 104512 – Published 16 September 2008


Single crystals of BaRh2As2 have been synthesized from a Pb flux. We present the room-temperature crystal structure, single-crystal x-ray diffraction measurements as a function of temperature T, anisotropic magnetic susceptibility χ versus T, electrical resistivity in the ab plane ρ versus T, Hall coefficient versus T and magnetic field H, and heat capacity C versus T measurements on the crystals. The single-crystal structure determination confirms that BaRh2As2 forms in the tetragonal ThCr2Si2-type structure (space group I4/mmm) with lattice parameters a=b=4.0564(6)Å and c=12.797(4)Å. Band-structure calculations show that BaRh2As2 should be metallic with a small density of states at the Fermi energy N(EF)=3.49states/eVf.u. (where f.u.formula unit) for both spin directions. ρ(T) data in the ab plane confirm that the material is indeed metallic with a residual resistivity ρ(2K)=29μΩcm and with a residual resistivity ratio ρ(310K)/ρ(2K)=5.3. The observed χ(T) is small (105cm3/mol) and weakly anisotropic with χab/χc2. The C(T) data indicate a small density of states at the Fermi energy with the low-temperature Sommerfeld coefficient γ=4.7(9)mJ/molK2. There are no indications of superconductivity, spin-density wave, or structural transitions between 2 and 300 K. We compare the calculated density of states versus energy of BaRh2As2 with that of BaFe2As2.

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  • Received 29 July 2008


©2008 American Physical Society

Authors & Affiliations

Yogesh Singh1, Y. Lee1, S. Nandi1, A. Kreyssig1, A. Ellern2, S. Das1, R. Nath1, B. N. Harmon1, A. I. Goldman1, and D. C. Johnston1

  • 1Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA
  • 2Department of Chemistry, Iowa State University, Ames, Iowa 50011, USA

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Vol. 78, Iss. 10 — 1 September 2008

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