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    Growth and magnetic properties of multiferroic LaxBi1xMnO3 thin films

    M. Gajek1,*, M. Bibes2, F. Wyczisk3, M. Varela4, J. Fontcuberta5, and A. Barthélémy1

    • 1Unité Mixte de Physique CNRS-Thales, Route départementale 128, 91767 Palaiseau, France
    • 2Institut d’Electronique Fondamentale, CNRS, Université Paris-Sud, 91405 Orsay, France
    • 3Thales Research and Technology France, Route départementale 128, 91767 Palaiseau, France
    • 4Departament de Física Aplicada i Òptica, Universitat de Barcelona, Diagonal 647, 08028 Barcelona, Spain
    • 5ICMAB, CSIC, Campus de la Universitat Autónoma de Barcelona, 08193 Bellaterra, Spain

    • *Electronic address: mgajek@berkeley.edu

    Phys. Rev. B 75, 174417 – Published 11 May, 2007

    DOI: https://doi.org/10.1103/PhysRevB.75.174417

    Abstract

    A comparative study of LaxBi1xMnO3 thin films grown on SrTiO3 substrates is reported. It is shown that these films grow epitaxially in a narrow pressure-temperature range. A detailed structural and compositional characterization of the films is performed within the growth window. The structure and the magnetization of this system are investigated. We find a clear correlation between the magnetization and the unit-cell volume that we ascribe to Bi deficiency and the resultant introduction of a mixed valence on the Mn ions. On these grounds, we show that the reduced magnetization of LaxBi1xMnO3 thin films compared to the bulk can be explained quantitatively by a simple model, taking into account the deviation from nominal composition and the Goodenough-Kanamori-Anderson rules of magnetic interactions.

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