Generalized transport-band field-effect mobility in disordered organic and inorganic semiconductors

P. Servati, A. Nathan, and G. A. J. Amaratunga
Phys. Rev. B 74, 245210 – Published 15 December 2006


Field-effect mobility μFE and its activation energy in disordered inorganic and organic semiconductor thin-film transistors is strongly dependent on bias conditions. This implies a nonlinear dependence of conductivity on carrier concentration, which stems from the high density of trapped carriers while only a few contribute to conduction. When μFE is extracted from measurement data, the nonlinear conductivity-concentration dependence is averaged over the semiconducting film. Consequently, μFE becomes mingled with device attributes such as gate capacitance in addition to terminal bias, which undermines the physical interpretation of μFE and subsequent comparison of measured values for different devices and different semiconductors. This paper presents an effective mobility μeff description at a reference carrier concentration, which separates the physical conductivity-concentration dependence from the device and bias attributes, enabling comparison of carrier transport in disordered semiconductors. In particular, by using the generalized concept of mobility edge and exponential band tails we show that μeff can be applied to a wide range of inorganic and organic semiconductors. Indeed, three parameters, viz., μeff, exponential band tail slope Tt, and bias-independent activation energy Ea0 of μeff, can describe carrier transport in the transistor together with its bias and temperature dependence.

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  • Received 25 April 2006


©2006 American Physical Society

Authors & Affiliations

P. Servati1, A. Nathan2, and G. A. J. Amaratunga1

  • 1Electrical Engineering Division, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
  • 2London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom

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Vol. 74, Iss. 24 — 15 December 2006

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