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Doped Mott insulator: Results from mean-field theory

Henrik Kajueter, Gabriel Kotliar, and Goetz Moeller
Phys. Rev. B 53, 16214 – Published 15 June 1996
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Abstract

The Mott transition phenomena can be studied systematically in the limit of large lattice spatial coordination. We investigate the properties of doped Mott insulators with a variety of techniques and compare our results with experiments on transition-metal oxides. © 1996 The American Physical Society.

  • Received 18 September 1995

DOI:https://doi.org/10.1103/PhysRevB.53.16214

©1996 American Physical Society

Authors & Affiliations

Henrik Kajueter, Gabriel Kotliar, and Goetz Moeller

  • Department of Physics, Rutgers University, Piscataway, New Jersey 08855-0849

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Vol. 53, Iss. 24 — 15 June 1996

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