Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions

A quantum-mechanical calculation of radiative recombinations in cylindrical GaAs-(Ga,Al)As quantum-well wires excited by a cw laser in a photoluminescence experiment under quasistationary excitation conditions is performed. We work within the effective-mass approximation and the parabolic-band model for describing both electrons and holes, and consider, in the steady state, the interband absorption, and some radiative recombination mechanisms, such as recombination of electrons with free holes and with holes bound at acceptors. Carrier densities and electron-hole recombination decay times are calculated at room temperature and as functions of the laser intensity. For doped quantum-well wires, it is shown that the presence of acceptors substantially modifies the dependence on the laser intensity of the above quantities. © 1996 The American Physical Society.