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Quantum confinement in nanometer-sized silicon crystallites

Xinwei Zhao, Olaf Schoenfeld, Shuji Komuro, Yoshinobu Aoyagi, and Takuo Sugano
Phys. Rev. B 50, 18654 – Published 15 December 1994
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Abstract

Picosecond decay and temperature-dependence measurements of violet and blue-light emissions from nanocrystalline-silicon thin films were carried out. The luminescence band exhibits separated peaks at a wavelength region from 350 to 500 nm and shows no intensity degradation. The emission energies of the peaks shift towards the high-energy side at low temperatures by a temperature coefficient similar to single-crystalline silicon. The photoluminescence decays of these emissions can be completely fitted by a double-exponential equation. The two components of the lifetime τ1 and τ2 determined from the decay curves are 170 and 600 ps, respectively. All the optical events finish within 5 ns. The short lifetimes are suggested to be caused by an enhancement effect on the oscillator strength of the confined levels in zero-dimensionally confined silicon nanometer-sized crystallites.

  • Received 7 September 1994

DOI:https://doi.org/10.1103/PhysRevB.50.18654

©1994 American Physical Society

Authors & Affiliations

Xinwei Zhao and Olaf Schoenfeld

  • Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan

Shuji Komuro

  • Faculty of Engineering, Toyo University, Kawagoe, Saitama 350, Japan

Yoshinobu Aoyagi and Takuo Sugano

  • Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-01, Japan

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Vol. 50, Iss. 24 — 15 December 1994

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