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Femtosecond energy transfer in a-Si:H

A. Mourchid, R. Vanderhaghen, D. Hulin, and P. M. Fauchet
Phys. Rev. B 42, 7667(R) – Published 15 October 1990
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Abstract

Using femtosecond optical pulses to inject a carrier density greater than 1019 cm3, we observe that most of the carriers disappear within a few picoseconds. We show that this phenomenon results from nonradiative recombination, a process in which each electron-hole pair heats the lattice by giving up an energy equal to the pump photon energy. The delay between carrier recombination and lattice heating is estimated to be smaller than 100 fs, which may result from a very fast coupling between optical and acoustical phonons.

  • Received 21 March 1990

DOI:https://doi.org/10.1103/PhysRevB.42.7667

©1990 American Physical Society

Authors & Affiliations

A. Mourchid

  • Laboratoire d’Optique Appliquée, Ecole Nationale Supérieure de Techniques Avancées, Ecole Polytechnique, F-91120 Palaiseau, France
  • Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, F-91120 Palaiseau, France

R. Vanderhaghen

  • Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique, F-91120 Palaiseau, France

D. Hulin

  • Laboratoire d’Optique Appliquée, Ecole Nationale Supérieure de Techniques Avancées, Ecole Polytechnique, F-91120 Palaiseau, France
  • Groupe de Physique des Solides, Université René Descartes, Paris 5, France

P. M. Fauchet

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

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Vol. 42, Iss. 12 — 15 October 1990

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