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Anharmonic elastic and phonon properties of Si

David Vanderbilt, S. H. Taole, and Shobhana Narasimhan
Phys. Rev. B 40, 5657 – Published 15 September 1989; Erratum Phys. Rev. B 42, 11373 (1990)
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Abstract

A unified framework is suggested for the discussion of anharmonic phonon coupling constants and anharmonic elastic constants in diamond-structure materials. A summary is given, within this framework, of those anharmonic constants which have previously been determined experimentally or theoretically for silicon. New local-density total-energy calculations for X-point phonons in Si are used to add to this database of known anharmonic constants. It is proposed that empirical models for interatomic potentials should be constrained to fit this database. A generalized Keating model which has been fitted in this way, with two- and three-body couplings of third and fourth order, is presented. It can be used to calculate arbitrary anharmonic phonon couplings through fourth order.

  • Received 25 July 1989

DOI:https://doi.org/10.1103/PhysRevB.40.5657

©1989 American Physical Society

Erratum

Erratum: Anharmonic elastic and phonon properties of Si

David Vanderbilt, S. H. Taole, and Shobhana Narasimhan
Phys. Rev. B 42, 11373 (1990)

Authors & Affiliations

David Vanderbilt

  • Department of Physics, Harvard University, Cambridge, Massachusetts 02138

S. H. Taole

  • Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138

Shobhana Narasimhan

  • Department of Physics, Harvard University, Cambridge, Massachusetts 02138

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Issue

Vol. 40, Iss. 8 — 15 September 1989

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