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Planar channeling in superlattices: Resonance channeling

W. R. Allen, W. K. Chu, S. T. Picraux, R. M. Biefeld, and J. A. Ellison
Phys. Rev. B 39, 3954 – Published 1 March 1989
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Abstract

A resonance effect is reported for planar channeling of MeV helium ions in a strained-layer superlattice. In addition to the well-documented catastrophic dechanneling which maximizes dechanneling, a novel resonance channeling effect has been observed that minimizes the dechanneling. These two contrasting phenomena are demonstrated in a single sample by varying the projectile energy for channeling along the inclined {110} planes of a GaAs0.8P0.2/GaAs superlattice of equal-thickness layers. The resonance phenomena are measured and modeled theoretically as a function of ion energy and crystal strain.

  • Received 20 October 1988

DOI:https://doi.org/10.1103/PhysRevB.39.3954

©1989 American Physical Society

Authors & Affiliations

W. R. Allen and W. K. Chu

  • Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599-3255

S. T. Picraux and R. M. Biefeld

  • Sandia National Laboratories, Albuquerque, New Mexico 87185

J. A. Ellison

  • University of New Mexico, Department of Mathematics, Albuquerque, New Mexico 87131

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Vol. 39, Iss. 7 — 1 March 1989

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