Generalized model for the optical absorption edge in <i>a</i>-Si:H

T. Datta; John A. Woollam

doi:10.1103/PhysRevB.39.1953

APS Statement on Ukraine

Generalized model for the optical absorption edge in a-Si:H

T. Datta and John A. Woollam

Phys. Rev. B 39, 1953 – Published 15 January 1989

Abstract

We have reanalyzed the published optical absorption coefficient data for a-Si:H and introduced a divergence temperature, a new concept in the physics of these materials.

Received 25 July 1988

DOI:https://doi.org/10.1103/PhysRevB.39.1953

Authors & Affiliations

T. Datta

Department of Physics and Astronomy, University of South Carolina, Columbia, South Carolina 29208

John A. Woollam

Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588-0511

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Vol. 39, Iss. 3 — 15 January 1989

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Physical Review B

covering condensed matter and materials physics

Generalized model for the optical absorption edge in a-Si:H

T. Datta and John A. Woollam

Phys. Rev. B 39, 1953 – Published 15 January 1989

Abstract

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References (Subscription Required)

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Physical Review B

covering condensed matter and materials physics

Generalized model for the optical absorption edge in a-Si:H

T. Datta and John A. Woollam

Phys. Rev. B 39, 1953 – Published 15 January 1989

Abstract

Authors & Affiliations

References (Subscription Required)

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