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Temperature-dependent electronic excitations of the Ge(111) -2×1 surface
Phys. Rev. B 34, 1330(R) – Published 15 July, 1986
DOI: https://doi.org/10.1103/PhysRevB.34.1330
Abstract
The temperature dependence of the surface-state electronic transition for cleaved Ge(111)-2×1 is reported and compared to previous results on Si(111)-2×1. Ge(111)-2×1 shows an almost linear dependence of the surface-state band gap between 30 and 295 K, varying between 535 and 415 meV, respectively. Cleaved Ge(111)-2×1 shows little evidence for the defect-induced states usually found, even on excellent single-domain 2×1 cleaves of Si(111).