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Topological Dirac nodal loops in nonsymmorphic hydrogenated monolayer boron

N. T. Cuong, I. Tateishi, M. Cameau, M. Niibe, N. Umezawa, B. Slater, K. Yubuta, T. Kondo, M. Ogata, S. Okada, and I. Matsuda
Phys. Rev. B 101, 195412 – Published 7 May 2020

Abstract

The existence of a topological Dirac nodal loop is predicted for hydrogenated monolayer boron sheets with a nonsymmorphic symmetry. The three-center two-electron bonds in boron compounds restrict the electronic system to be insulating or semimetallic with a Dirac nodal loop. Two types of electronic structures are distinguished by the Z2 topological index and confirmed by first-principles total-energy calculations. The topological taxonomy, developed in this research, can be applied to other two-dimensional materials and to seek novel Dirac fermions.

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  • Received 30 June 2019
  • Revised 26 March 2020
  • Accepted 27 March 2020

DOI:https://doi.org/10.1103/PhysRevB.101.195412

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter & Materials Physics

Authors & Affiliations

N. T. Cuong1, I. Tateishi2,*, M. Cameau3, M. Niibe4,5, N. Umezawa6, B. Slater7, K. Yubuta8, T. Kondo1,9, M. Ogata2, S. Okada1, and I. Matsuda5,†

  • 1Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, 305-8571, Japan
  • 2Department of Physics, School of Science, University of Tokyo, Hongo, Tokyo 113-0033, Japan
  • 3Institut des Nanosciences de Paris, Sorbonne Universite, Paris, 75005, France
  • 4Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo, Hyogo 678-1205, Japan
  • 5Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 6Semiconductor R&D Center, Samsung Electronics, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Korea
  • 7Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom
  • 8Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 9Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503, Japan

  • *i.tateishi@hosi.phys.s.u-tokyo.ac.jp
  • imatsuda@issp.u-tokyo.ac.jp

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Issue

Vol. 101, Iss. 19 — 15 May 2020

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