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    Persistent High Polarization of Excited Spin Ensembles During Light Emission in Semiconductor Quantum-Dot-Well Hybrid Nanosystems

    Kazuki Takeishi1, Satoshi Hiura1, Junichi Takayama1, Kodai Itabashi1, Masayuki Urabe1, Akihiro Washida1, Takayuki Kiba2, and Akihiro Murayama1,*

    • 1Graduate School of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
    • 2Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan

    • *murayama@ist.hokudai.ac.jp

    Phys. Rev. Applied 10, 034015 – Published 10 September, 2018

    DOI: https://doi.org/10.1103/PhysRevApplied.10.034015

    Abstract

    We demonstrate persistent high degrees of spin polarization (SPD) up to 70% during light emission in (In1xGax)As quantum-dot–well (QD–QW) hybrid nanosystems, where QD excited states are laterally tunnel coupled through the adjacent two-dimensional QW potential depending on the QW thickness. Spin-polarized electrons are photo-excited by using circularly polarized light pulses. The decay time of spin relaxation, obtained by that of the SPD, is 70 times larger than the photoluminescence decay time. The temporally constant SPD is sustained by a selective transfer of minority spins among QDs after flipping from the majority spins, which is promoted by a moderate state filling of lower-energy spin sublevels in surrounding QDs. The spin transfer times are deduced as functions of the QW thickness and excited-spin density. These results can provide a precise control of lateral interdot spin-transfer dynamics and resultant suppression of spin relaxation in QD ensembles.

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