Silicon-on-insulator-compatible degenerate-band-edge photonic structure: Design rules and robustness analysis
Phys. Rev. A 113, 043510 – Published 10 April, 2026
DOI: https://doi.org/10.1103/lnsb-8l7f
Abstract
Optical periodic structures exhibiting a degenerate band edge (DBE) are of significant interest for various applications such as switching, sensing, high-power amplification, and lasing. At the edge of the bandgap in such structures, a fourth-order exceptional point degeneracy arises, leading to an extremely flat dispersion band. We propose and study a silicon-on-insulator-compatible structure composed of two coupled waveguides with asymmetric gratings. The dispersion relations and the field profiles are obtained using three-dimensional finite-difference time-domain simulations, and we provide a set of practical guidelines for the design and optimization of such structures, in order to obtain a DBE. We analyze the transmission and reflection spectra of finite-size devices and investigate their spectral properties near the stationary points. The scaling of the resonance quality factor with the number of unit cells is studied, revealing a performance that surpasses that of conventional periodic structures. Finally, we examine the robustness of the DBE with respect to fabrication tolerances and structural imperfections.
