Quantum-enhanced photocell based on GaN quantum dots
Phys. Rev. A 113, 052226 – Published 26 May, 2026
DOI: https://doi.org/10.1103/jywm-2nrs
Abstract
In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots (QDs). We exploit the strong built-in electric field in GaN QDs and the excitonic dipole-dipole interaction between adjacent QDs to break detailed balance, thereby enhancing device performance. This mechanism is significantly stronger than Fano interference, and our results demonstrate that such a photocell exhibits increased photovoltage and photocurrent compared to its noninteracting counterparts. Numerical calculations further show that the efficiency remains positive and saturates at a finite value for multi-QD systems. The proposed quantum photocell represents a promising step towards harnessing quantum effects in practical energy-harvesting devices.
