We propose a series of dissipation-assisted entanglement generation protocols that can be implemented on a trapped-ion quantum simulator. Our approach builds on the single-site molecular electron transfer (ET) model recently realized in experiment [So et al., Sci. Adv. 10, eads8011 (2024)]. This model leverages spin-dependent boson displacement and dissipation controlled by sympathetic cooling. We show that, when coupled to external degrees of freedom, the ET model can be used as a dissipative quantum control mechanism, enabling the precise tailoring of both spin and boson steady states of a target subsystem. We derive simplified analytical formalisms that offer intuitive insights into the dissipative dynamics. Using realistic interactions in a trapped-ion system, we develop a protocol for generating $N$-qubit and $N$-boson $W$ states. Additionally, we generalize this protocol to realize generic $N$-qubit Dicke states with tunable excitation numbers. Finally, we outline a realistic experimental setup to implement our schemes in the presence of noise sources.

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• Chemical charge transfer
• Entanglement production
• Open quantum systems & decoherence
• Quantum engineering
• Quantum protocols
• Quantum simulation
• Trapped ions
• Atom & ion cooling
• Atom & ion trapping & guiding
• Perturbative methods
• Rabi model
• Spin-boson model