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    High-fidelity Raman spin-dependent kicks in the presence of micromotion

    Haonan Liu*, Varun D. Vaidya, Monica Gutierrez Galan, Alexander K. Ratcliffe, Amrit Poudel, and C. Ricardo Viteri

    • *Contact author: haonan.liu@ionq.co

    Phys. Rev. A 113, 043731 – Published 28 April, 2026

    DOI: https://doi.org/10.1103/972s-wd2q

    Abstract

    We propose high-fidelity single-qubit spin-dependent kicks (SDKs) for trapped ions using nanosecond Raman pulses via amplitude modulation of a continuous-wave laser with a tunable beat frequency. We develop a general method for maintaining SDK performance in the presence of micromotion by identifying optimal choices of the rf phase and frequency that suppress unwanted backward kicks. The proposed scheme enables SDK infidelities as low as 10−9 in the absence of micromotion, and on the order of 10−5 with micromotion. This study lays the foundation for the realization of sub-trap-period and high-fidelity two-qubit gates based on SDKs.

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