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    Resonance strengths and linear polarization of higher-order electronic recombination from Li-like to N-like ions

    Tianluo Luo1,*, Zhencen He1,2,*, Zhihao Yang3, and Zhimin Hu1,†

    • 1Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
    • 2West China School of Basic Medical Sciences and Forensic Medicine, Sichuan University, Chengdu 610041, China
    • 3College of Intelligent Manufacturing, Sichuan University of Arts and Science, Dazhou 635000, China

    • *These authors contributed equally to this work.
    • †Contact author: huzhimin@scu.edu.cn

    Phys. Rev. A 112, 012814 – Published 18 July, 2025

    DOI: https://doi.org/10.1103/7r4g-jsx8

    Abstract

    A systematic investigation of resonance strengths of intershell higher-order (HO) electronic recombination for Li-like to N-like highly charged ions with atomic numbers ranging from Z=10 to 60 is carried out based on the relativistic configuration-interaction method. The calculated results are compared with the previous work of Beilmann et al. [Phys. Rev. Lett. 107, 143201 (2011)], revealing significantly lower HO recombination resonance strengths for low-Z ions. In the present work, the correction to the HO resonance strength results from the inclusion of configuration interaction in the initial state of electronic recombination. Furthermore, the angular correction and linear polarization of HO electronic recombination are investigated to facilitate the comparison of the calculated resonance strengths with the electron-beam ion-trap measurements. An unexpected polarization behavior of dielectronic and trielectronic recombination has been shown, suggesting a promising opportunity for further study of the HO electronic recombination process.

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