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    Optical Studies of Injected Carriers. II. Recombination Radiation in Germanium

    Roger Newman

    • General Electric Research Laboratory, Schenectady, New York

    Phys. Rev. 91, 1313 – Published 15 September, 1953

    DOI: https://doi.org/10.1103/PhysRev.91.1313

    Abstract

    The radiation produced by the direct recombination of electrons and holes in germanium is studied. The observed spectral distribution is in fair agreement with theory. For injection into high resistivity, as well as into doped material, the radiation is observed to be a linear function of injection current. Possible explanations for this are discussed. Magnetic concentration of carriers produced changes in the radiation intensity. Polarization of the radiation at oblique angles of emergence is observed.

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