On the basis of an investigation of $n$-type germanium bombarded with high-energy electrons, it is herein concluded that a particular set of temporary hole traps is created by the bombardment. The bombardment centers which remained in the samples at room temperature were measured by resistivity changes and found to agree with the densities of traps. Different samples with trap densities varying from 5×${10}^{12}$/cc to 5×${10}^{14}$/cc were studied.

An analysis of the trapping kinetics, essentially similar to those previously reported by Haynes and Hornbeck and by Fan, permits the energy of the traps to be determined as 0.28 ev above the valence band while the cross section for capture is 6×${10}^{-15\mathrm{}}$ ${\mathrm{cm}}^2$ at 200°K.

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