Electronic properties of the selenium passivated GaP(111)B surface: Towards growth of large scale quasi-van der Waals 2D/3D heterostructureRemoveNiels Chapuis, Corentin Sthioul, Aymen Mahmoudi, Meryem Bouaziz, Christophe Coinon, Louis Thomas, Davide Romanin, Gilles Patriarche, Fabrice Oehler, Abdelkarim Ouerghi, and Xavier WallartPhys. Rev. Materials 9, 074002 (2025)
