The interfacial layer between layered chalcogenides and GaAs(111)B: The case of MBE-grown NiTe2-GaAs(111)BRemoveM. Eddrief, Y. Zheng, J. Kucharek, M. Bouaziz, A. Ouerghi, and P. AtkinsonPhys. Rev. Materials 10, 044201 (2026)
Topological invariants and topological charges in photonic systemsRemoveKristian Arjas, Grazia Salerno, and Päivi TörmäPhys. Rev. B 112, 235428 (2025)
