Anomalous hopping regime at the Mott transition from disordered semiconductor to disordered metal in Si-doped Ga2O3RemoveF. Egyenes, M. Moško, Z. Chi, A. Vincze, K. Hušeková, E. Dobročka, A. Rosová, M. Precner, P. Ondrejka, E. Chikoidze, M. Mikolášek, M. Mičušík, M. Ťapajna, and F. GucmannPhys. Rev. B 113, 195205 (2026)
